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| STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESHTM IGBT General features Type STGW35NB60SD VCES 600V VCE(sat) (Max)@ 25C < 1.7V IC @100C 35A LOW ON-VOLTAGE DROP (VCEsat) 3 LOW INPUT CAPACITANCE HIGH CURRENT CAPABILITY 2 1 TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. Internal schematic diagram Applications LIGHT DIMMER HID WELDING MOTOR CONTROL STATIC RELAYS Order codes Sales Type STGW35NB60SD Marking GW35NB60SD Package TO-247 Packaging TUBE November 2005 Rev 1 1/13 www.st.com 13 1 Electrical ratings STGW35NB60SD 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at 25C Collector Current (continuous) at 100C Collector Current (pulsed) Gate-Emitter Voltage Diode RMS Forward Current at TC = 25C Total Dissipation at TC = 25C Operating Junction Temperature - 55 to 150 Tstg TL Storage Temperature Maximum Lead Temperature for Soldering Purpose (1.6mm from case, for 10sec.) 300 C C Value 600 70 35 250 20 30 200 Unit V A A A V A W Symbol VCES IC Note 4 IC Note 4 ICM Note 1 VGE If PTOT Tj Table 2. Thermal resistance Min. Typ. ---Max. 0.625 1.5 50 Unit C/W C/W C/W Rthj-case Rthj-case Rthj-amb Thermal Resistance Junction-case (IGBT) Thermal Resistance Junction-case (DIODE) Thermal Resistance Junction-ambient ---- 2/13 STGW35NB60SD 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(SAT) VGE(th) ICES Static Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Collector-Emitter Leakage Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Forward Transconductance Test Conditions IC = 1mA, V GE = 0 VGE= 15V, IC= 20A, Tj= 25C VGE= 15V, IC= 20A, Tj= 125C VCE= VGE, IC= 250A VCE = Max Rating,Tc=25C VCE = Max Rating, Tc=125C VGE = 20V , VCE = 0 VCE = 10V, IC= 18A 20 2.5 Min. 600 1.25 1.2 1.7 Typ. Max. Unit V V V V A A nA S 5 10 100 100 IGES gfs Table 4. Symbol C ies C oes Cres Qg Qge Qgc ICL Dynamic Parameter Test Conditions Min. Typ. 1820 167 27 83 10 27 80 115 Max. Unit pF pF pF Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current VCE = 480V, IC = 20A, VGE = 15V, (see Figure 17) Vclamp = 480V , Tj = 125C RG = 100 nC nC nC A 3/13 2 Electrical characteristics STGW35NB60SD Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions VCC = 480V, IC = 20A RG= 100, VGE= 15V, Tj= 25C (see Figure 3) VCC = 480V, IC = 20A RG= 100, VGE= 15V, Tj= 125C (see Figure 3) Vcc = 480V, IC = 20A, RGE = 100 , VGE = 5V,T J=25C (see Figure 18) Vcc = 480V, IC = 20A, RGE=100,VGE =15V, Tj=125C (see Figure 18) Min. Typ. 92 70 340 80 73 320 0.78 1.1 0.79 1.1 2.4 1.2 Max. Unit ns ns A/s ns ns A/s s s s s s s Table 6. Symbol Eon Note 2 Eoff Note 3 Ets Eon Note 2 Eoff Note 3 Ets Switching energy (inductive load) Parameter Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Test Conditions VCC = 480V, IC = 20A RG=100, VGE= 15V, Tj= 25C (see Figure 18) VCC = 480V, IC = 20A RG=100, VGE= 15V, Tj= 125C (see Figure 18) Min. Typ. 0.84 7.4 8.24 0.86 11.5 12.4 Max. Unit mJ mJ mJ mJ mJ mJ 4/13 STGW35NB60SD Table 7. Symbol Vf trr ta Qrr Irrm S trr ta Qrr Irrm S Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Time If = 20A, VR = 40V, Tj = 125C, di/dt = 100A/s (see Figure 19) 2 Electrical characteristics Collector-emitter diode Parameter Forward On-Voltage Reverse Recovery Time If = 20A, VR = 40V, Tj = 25C, di/dt = 100A/s (see Figure 19) Test Conditions If = 10A If = 10A, Tj = 125C Min. Typ. 1.3 1 44 32 66 3 0.375 88 56 237 5.4 0.57 Max. 2 Unit V V ns ns nC A ns ns nC A (1)Pulse width limited by max. junction temperature (2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) (3) Turn-off losses include also the tail of the collector current (4) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 5/13 2 Electrical characteristics STGW35NB60SD 2.1 Electrical characteristics (curves) Output Characteristics Figure 2. Transfer Characteristics Figure 1. Figure 3. Transconductance Figure 4. Normalized Collector-Emitter On Voltage vs Temperature Figure 5. Collector-Emitter on Voltage vs Collector Current Figure 6. Gate Threshold vs Temperature 6/13 STGW35NB60SD 2 Electrical characteristics Figure 7. Normalized Breakdown Voltage vs Temperature Figure 8. Gate Charge vs Gate-Emitter Voltage Figure 9. Capacitance Variations Figure 10. Switching Losses vs Gate Charge Figure 11. Switching Losses vs Temperature Figure 12. Switching Losses vs Collector Current 7/13 2 Electrical characteristics STGW35NB60SD Figure 14. Turn-Off SOA Figure 13. Thermal Impedance Figure 15. Emitter-Collector Diode Characteristics 8/13 STGW35NB60SD 3 Test Circuits 3 Test Circuits Figure 17. Gate Charge Test Circuit Figure 16. Test Circuit for Inductive Load Switching Figure 18. Switching Waveform Figure 19. Diode Recovery Time Waveform 9/13 4 Package mechanical data STGW35NB60SD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW35NB60SD 4 Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 11/13 5 Revision History STGW35NB60SD 5 Revision History Date 16-Nov-2005 Revision 1 Initial release. Changes 12/13 STGW35NB60SD 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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